? semiconductor components industries, llc, 2008 september, 2008 ? rev. 14 1 publication order number: 2n6035/d (pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 plastic darlington complementary silicon power transistors plastic darlington complementary silicon power transistors are designed for general purpose amplifier and low ? speed switching applications. features ? esd ratings: machine model, c; > 400 v human body model, 3b; > 8000 v ? epoxy meets ul 94 v ? 0 @ 0.125 in ? pb ? free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage 2n6034 2n6035, 2n6038 2n6036, 2n6039 v ceo 40 60 80 vdc collector ? base voltage 2n6034 2n6035, 2n6038 2n6036, 2n6039 v cbo 40 60 80 vdc emitter ? base voltage v ebo 5.0 vdc collector current continuous peak i c 4.0 8.0 adc apk base current i b 100 madc total device dissipation @ t c = 25 c derate above 25 c p d 40 320 w mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 3.12 c/w thermal resistance, junction ? to ? ambient r ja 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com 4.0 amperes darlington complementary silicon power transistors 40, 60, 80 volts, 40 watts y = year ww = work week 2n603x = device code x = 4, 5, 6, 8, 9 g=pb ? free package to ? 225aa case 77 style 1 marking diagram yww 2 n603xg 3 2 1 see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information collector 2,4 base 3 emitter 1
(pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) 2n6034 2n6035, 2n6038 2n6036, 2n6039 v ceo(sus) 40 60 80 ? ? ? vdc collector ? cutoff current (v ce = 40 vdc, i b = 0) 2n6034 (v ce = 60 vdc, i b = 0) 2n6035, 2n6038 (v ce = 80 vdc, i b = 0) 2n6036, 2n6039 i ceo ? ? ? 100 100 100 a collector ? cutoff current (v ce = 40 vdc, v be(off) = 1.5 vdc) 2n6034 (v ce = 60 vdc, v be(off) = 1.5 vdc) 2n6035, 2n6038 (v ce = 80 vdc, v be(off) = 1.5 vdc) 2n6036, 2n6039 (v ce = 40 vdc, v be(off) = 1.5 vdc, t c = 125 c) 2n6034 (v ce = 60 vdc, v be(off) = 1.5 vdc, t c = 125 c) 2n6035, 2n6038 (v ce = 80 vdc, v be(off) = 1.5 vdc, t c = 125 c) 2n6036, 2n6039 i cex ? ? ? ? ? ? 100 100 100 500 500 500 a collector ? cutoff current (v cb = 40 vdc, i e = 0) 2n6034 (v cb = 60 vdc, i e = 0) 2n6035, 2n6038 (v cb = 80 vdc, i e = 0) 2n6036, 2n6039 i cbo ? ? ? 0.5 0.5 0.5 madc emitter ? cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 2.0 madc on characteristics dc current gain (i c = 0.5 adc, v ce = 3.0 vdc) (i c = 2.0 adc, v ce = 3.0 vdc) (i c = 4.0 adc, v ce = 3.0 vdc) h fe 500 750 100 ? 15,000 ? ? collector ? emitter saturation voltage (i c = 2.0 adc, i b = 8.0 madc) (i c = 4.0 adc, i b = 40 madc) v ce(sat) ? ? 2.0 3.0 vdc base ? emitter saturation voltage (i c = 4.0 adc, i b = 40 madc) v be(sat) ? 4.0 vdc base ? emitter on voltage (i c = 2.0 adc, v ce = 3.0 vdc) v be(on) ? 2.8 vdc dynamic characteristics small ? signal current ? gain (i c = 0.75 adc, v ce = 10 vdc, f = 1.0 mhz) |h fe | 25 ? ? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) 2n6034, 2n6035, 2n6036 2n6038, 2n6039 c ob ? ? 200 100 pf *indicates jedec registered data.
(pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 http://onsemi.com 3 figure 1. switching times test circuit 4.0 0.04 figure 2. switching times i c , collector current (amp) t, time (s) 2.0 1.0 0.6 0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.4 0.8 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 60 scope for t d and t r , d 1 is disconnected and v 2 = 0, r b and r c are varied to obtain desired test currents. for npn test circuit, reverse diode, polarities and input pulses. r b & r c varied to obtain desired current levels d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c figure 3. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance, normalized 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 0 500 jc (t) = r(t) jc jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.03 0.3 3.0 30 300
(pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 http://onsemi.com 4 active ? region safe ? operating area 1.0 5.0 figure 4. 2n6035, 2n6036 v ce , collector-emitter voltage (volts) 7.0 5.0 3.0 2.0 0.1 7.0 10 30 50 100 bonding wire limited thermally limited 70 1.0 i c , collector current (amp) t j = 150 c dc 1.0ms 100 s figure 5. 2n6038, 2n6039 0.7 0.5 0.2 20 2n6036 2n6035 0.3 1.0 5.0 v ce , collector-emitter voltage (volts) 7.0 5.0 3.0 2.0 0.1 7.0 10 30 50 100 70 1.0 i c , collector current (amp) 0.7 0.5 0.2 20 2n6039 2n6038 0.3 5.0ms @ t c = 25 c (single pulse) second breakdown limited 100 s 1.0ms 5.0ms dc bonding wire limited thermally limited t j = 150 c @ t c = 25 c (single pulse) second breakdown limited there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 4 and 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 0.04 v r , reverse voltage (volts) 10 0.4 0.6 1.0 2.0 40 4.0 0.06 0.1 0.2 c, capacitance (pf) 100 50 30 t c = 25 c c ib 70 c ob pnp npn figure 6. capacitance 20 6.0 10 20 6.0 k 0.04 figure 7. dc current gain i c , collector current (amp) 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 h fe , dc current gain 1.0 k 2.0 k v ce = 3.0 v 0.4 2.0 pnp 2n6034, 2n6035, 2n6036 npn 2n6038, 2n6039 4.0 k 3.0 k t c = 125 c 25 c -55 c 6.0 k 0.04 i c , collector current (amp) 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 h fe , dc current gain 1.0 k 2.0 k v ce = 3.0 v 0.4 2.0 4.0 k 3.0 k t j = 125 c 25 c -55 c
(pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 8. collector saturation region 3.4 0.1 i b , base current (ma) 0.6 0.2 1.0 2.0 10 100 2.2 1.8 i c = 0.5 a t j = 25 c 1.0 a 2.6 3.0 0.5 5.0 2.2 0.04 i c , collector current (amp) 0.06 0.1 0.2 0.4 0.6 2.0 4.0 1.8 1.4 1.0 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) figure 9. ?on? voltages v be @ v ce = 3.0 v 1.0 20 50 1.4 1.0 2.0 a 4.0 a 3.4 0.1 i b , base current (ma) 0.6 0.2 1.0 2.0 10 10 0 2.2 1.8 i c = 0.5 a t j = 25 c 1.0 a 2.6 3.0 0.5 5.0 20 50 1.4 1.0 2.0 a 4.0 a i c , collector current (amp) 2.2 0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0 1.8 1.4 1.0 0.6 0.2 v, voltage (volts) 1.0 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 3.0 v ordering information device package shipping 2n6034 to ? 225aa 500 units / box 2n6034g to ? 225aa (pb ? free) 2n6035 to ? 225aa 2n6035g to ? 225aa (pb ? free) 2n6036 to ? 225aa 2n6036g to ? 225aa (pb ? free) 2n6038 to ? 225aa 2N6038G to ? 225aa (pb ? free) 2n6039 to ? 225aa 2n6039g to ? 225aa (pb ? free)
(pnp) 2n6034, 2n6035, 2n6036; (npn) 2n6038, 2n6039 http://onsemi.com 6 package dimensions to ? 225aa case 77 ? 09 issue z style 1: pin 1. emitter 2. collector 3. base notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077-01 thru -08 obsolete, new standard 077-09. ? b ? ? a ? m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 2n6035/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
